abstract. Home Seminar. Bicmos Technology Abstract is driving silicon technology toward higher speed, higher integration, and more functionality. Further. Explore BiCMOS Technology with Free Download of Seminar Report and PPT in PDF and DOC Format. Also Explore the Seminar Topics. Download the PPT on BiCMOS, an evolved semiconductor technology. Learn the characteristics, fabrication, Integrated Circuit design.
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Bicmos Technology Full Seminar Report, abstract and Presentation download
Complementary MOS offers an inverter with near-perfect characteristics such as high, symmetrical noise margins, high input and low output impedance, high gain in the transition region, high packing density, and low power dissipation. Speed is the only restricting factor, especially when large capacitors must be driven.
For similar fanouts and a comparable technology, the propagation delay is about two to five times smaller than for the CMOS gate.
However, this is achieved at a price. The high power consumption makes very large scale integration difficult.
A k-gate ECL circuit, for instance, consumes 60 W for a signal swing of 0. In recent years, improved technology has made it possible to combine complimentary MOS transistors and bipolar devices in a single process at a reasonable cost. A single n -epitaxial gechnology is used to implement both the PMOS transistors and bipolar npn transistors.
Its resistivity is chosen so that it can support both devices. The p -buried layer improves the packing density, because the collector-collector spacing of the bipolar devices can be reduced. It comes at the expense of an increased collector-substrate capacitance. This technology opens a wealth of new opportunities, because it is now possible to combine the high-density integration of MOS logic with the techhnology capabilities of bipolar transistors.
We first discuss the gate in general and then provide a more detailed discussion of the steady-state and transient characteristics, and the power consumption. Most of the techniques used in this section are similar to those used for CMOS and ECL gates, so we will keep the analysis short and leave the detailed derivations as an exercise. Discussing one is sufficient to illustrate the basic concept and properties of the gate.
The result is a low output voltage. A low Vinon the reporg hand, causes M 2 and Q 2 to turn on, while M 1 and Q 1 teechnology in the offstate, resulting in a high output level. In steady-state operation, Q 1 and Q 2 are never on simultaneously, keeping the power consumption low. An attentive reader may notice the similarity between this structure and the TTL gate, described in the addendum on bipolar semminar.
Both use a bipolar push-pull output stage. In the BiCMOS structure, the input stage and the phase-splitter are implemented tfchnology MOS, which results in a better performance and higher input impedance. The impedances Z 1 and Z 2 are necessary to remove the base charge of the bipolar transistors when they are being turned off.
For instance, during a high-to-low transition on the input, M 1 turns off technolog. To turn off Q 1, its base charge has to be removed. This happens through Z 1.
Adding these resistors not only reduces the transition times, but also has a positive effect on bicmoa power consumption. There exists a short period during the transition when both Q 1 and Q 2 are on simultaneously, thus creating a temporary current path between VDD and GND.
The resulting current seninar can be large and has a detrimental effect on both the power consumption and the supply noise. Therefore, turning off the devices as fast as possible is of utmost importance. The following properties of the voltage-transfer characteristic can be derived by inspection.
BICMOS Technology – Mobikida
First of all, the logic swing of the circuit ttechnology smaller than the supply voltage. Consider the high level. Q 2 acts as an emitter-follower, so that Vout rises to VDD? The same is also true for VOL.
For Vin high, M 1 is on. Consider for instance the circuit of Figure 0. The output voltage of VDD? This leads to a steady-state leakage current and power consumption. Various schemes have been proposed to get around this problem, resulting in gates with logic swings equal to the supply voltage at the bicmow of increased complexity.
Some of these schemes will be discussed later. Download your Full Reports for Bicmos Technology. Latest Seminar Topics for Engineering Students.
Are you interested in any one of this Seminar, Project Topics. Download your Full Reports for Bicmos Technology Complementary MOS offers an inverter with near-perfect characteristics such as high, symmetrical noise margins, high input and low output impedance, high gain in the transition region, high packing density, and low power dissipation.